| PART |
Description |
Maker |
| DSEA29-06AC |
Fast Recovery Diodes
HiPerDynFRED Epitaxial Diode(正向电流30A的HiPerDynFRED外延型二极管) 15 A, 600 V, SILICON, RECTIFIER DIODE
HiPerDynFRED Epitaxial Diode(正向电流30AB>HiPerDynFRED外延型二极管)
|
IXYS, Corp.
IXYS Corporation
|
| KDZ2.0EV KDZ3.0EV KDZ4.7EV KDZ6.8EV KDZ4.3EV KDZ5. |
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE(CONSTANT VOLTAGE REGULATION/ REFERENCE VOLTAGE)
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE(CONSTANT VOLTAGE REGULATION, REFERENCE VOLTAGE)
surface mount silicon Zener diodes 硅表面贴装齐纳二极管
240 x 320 pixel format, White Edge LED backlight 稳压二极管外延硅平面二极管（恒压规例，参考电压）
40 Characters x 1 Lines, 5x7 Dot Matrix Character and Cursor 40 个字x 1 线5 x 7 点阵字符和光
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
KEC Holdings
http://
|
| DSEE29-06CC |
HiPerDynFRED Epitaxial Diode(正向电流30AB>HiPerDynFRED外延型二极管)
HiPerDynFRED Epitaxial Diode(正向电流30A的HiPerDynFRED外延型二极管) 30 A, 300 V, SILICON, RECTIFIER DIODE
|
IXYS Corporation
IXYS, Corp.
|
| 1N4148D2B-JQRS.GRPC 1N4148D2A |
0.2 A, 75 V, SILICON, SIGNAL DIODE HERMETIC SEALED, CERAMIC, DLCC2 VARIANT B, 2 PIN
SILICON EPITAXIAL PLANAR DIODE
|
TT electronics Semelab, Ltd.
Seme LAB
|
| 1SV322 |
Diode Silicon Epitaxial Planar Type TCXO/VCO
TOSHIBA Diode Silicon Epitaxial Planar Type
|
Toshiba Semiconductor
|
| SW08CXC300 SW12CXC300 SW58CXC620 SW42CXC680 SW30CX |
650 A, 800 V, SILICON, RECTIFIER DIODE
650 A, 1200 V, SILICON, RECTIFIER DIODE
1520 A, 5800 V, SILICON, RECTIFIER DIODE
1610 A, 4200 V, SILICON, RECTIFIER DIODE
5100 A, 3000 V, SILICON, RECTIFIER DIODE
5100 A, 3200 V, SILICON, RECTIFIER DIODE
1030 A, 3600 V, SILICON, RECTIFIER DIODE
2050 A, 2800 V, SILICON, RECTIFIER DIODE
1860 A, 4000 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| HZH HZ9_H HZ_H HZ11_H HZ12_H HZ15_H HZ16_H HZ18_H |
3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
Diodes>Zener
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| R720366XXWA R5010210XXWA R9G00822XXWA R9G00622XXWA |
600 A, 3600 V, SILICON, RECTIFIER DIODE
100 A, 200 V, SILICON, RECTIFIER DIODE
2200 A, 800 V, SILICON, RECTIFIER DIODE
2200 A, 600 V, SILICON, RECTIFIER DIODE
2200 A, 400 V, SILICON, RECTIFIER DIODE
450 A, 150 V, SILICON, RECTIFIER DIODE
550 A, 50 V, SILICON, RECTIFIER DIODE
550 A, 150 V, SILICON, RECTIFIER DIODE
2500 A, 1300 V, SILICON, RECTIFIER DIODE
300 A, 900 V, SILICON, RECTIFIER DIODE
1800 A, 200 V, SILICON, RECTIFIER DIODE
1200 A, 3100 V, SILICON, RECTIFIER DIODE
2000 A, 2300 V, SILICON, RECTIFIER DIODE
3600 A, 2300 V, SILICON, RECTIFIER DIODE
100 A, 150 V, SILICON, RECTIFIER DIODE
|
POWEREX INC
|
| 1N4148CSM |
SILICON EPITAXIAL PLANAR DIODE 0.15 A, 75 V, SILICON, SIGNAL DIODE
|
TT electronics Semelab, Ltd.
Seme LAB
|
| KDV1471 |
FM Tuning
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
|
